| PART |
Description |
Maker |
| HMC-ALH140 |
GaAs HEMT MMIC LOW NOISE AMPLIFIER
|
Analog Devices
|
| HMC-ALH50810 |
GaAs HEMT LOW NOISE AMPLIFIER, 71 - 86 GHz
|
Hittite Microwave Corporation
|
| HMC-ALH482 |
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 22 GHz
|
Hittite Microwave Corporation
|
| HMC-ALH216 |
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz
|
Hittite Microwave Corporation
|
| HMC-ALH369 |
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz
|
Hittite Microwave Corporation
|
| HMC-ALH37609 |
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 35 - 45 GHz
|
Hittite Microwave Corporation
|
| HMC-ALH44510 |
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 18 - 40 GHz
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
| HMC752LC4 HMC752LC409 |
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 28 GHz
|
Hittite Microwave Corporation
|
| TC2623 |
12GHz Super Low Noise HEMT / AlGaAs/GaAs Field Effect Transistor
|
United Monolithic Semiconductors
|
| CFY25-20 CFY25-17 CFY25-23 Q62703-F107 Q62703-F106 |
Advanced PFC/PWM Combination Controllers 20-SOIC -40 to 105
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) 砷化镓场效应管（低噪声高增益对于前端放大器离子注入平面结构全部镀金）
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
|
SIEMENS AG
|
| FHX05LG |
Super Low Noise HEMT
|
Fujitsu Limited
|
| FHC40LG |
Super Low Noise HEMT
|
EUDYNA[Eudyna Devices Inc]
|
